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| Type BSC031N06NS3 G OptiMOSTM3 Power-Transistor Features * Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance RDS(on) * Superior thermal resistance * N-channel, normal level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Halogen-free according to IEC61249-2-21 Type BSC031N06NS3 G Product Summary V DS R DS(on),max ID 60 3.1 100 V m A Package Marking PG-TDSON-8 031N06NS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C2) V GS=10 V, T C=100 C V GS=10 V, T C=25 C, R thJA =50K/W 3) Pulsed drain current4) Avalanche energy, single pulse5) Gate source voltage 1) 2) 3) Value 100 100 Unit A 22 400 298 20 mJ V I D,pulse E AS V GS T C=25 C I D=50 A, R GS=25 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.9 K/W the chip is able to carry 165A. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) See figure 3 for more detailed information 5) See figure 13 for more detailed information Rev.2.3 page 1 2009-10-22 BSC031N06NS3 G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=50 K/W 3) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 139 2.5 -55 ... 150 55/150/56 C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA minimal footprint 6 cm cooling area 3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=93 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A V GS=20 V, V DS=0 V V GS=10 V, I D=50 A 60 2 3 0.1 4 1 A V 0.9 62 50 K/W 50 10 10 2.5 1.3 99 100 100 3.1 nA m S Rev.2.3 page 2 2009-10-22 BSC031N06NS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=90 A, R G=3 V GS=0 V, V DS=30 V, f =1 MHz - 8000 1700 58 38 161 63 16 11000 pF 2300 ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=50 A, V GS=0 to 10 V - 39 24 8 23 98 4.9 79 130 105 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=30 V, I F=90A , di F/dt =100 A/s - 0.86 48 73 100 400 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev.2.3 page 3 2009-10-22 BSC031N06NS3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 160 120 140 100 120 80 100 P tot [W] 80 I D [A] 0 50 100 150 200 60 60 40 40 20 20 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 10 s 102 10-1 0.2 0.1 Z thJC [K/W] 100 s 0.05 0.02 0.01 I D [A] 101 1 ms 10-2 single pulse 10 0 10 ms DC 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev.2.3 page 4 2009-10-22 BSC031N06NS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 200 7V 10 V 6V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 12 5V 5.5 V 160 10 8 5.5 V R DS(on) [m] 120 I D [A] 6 6V 80 4 5V 7V 10 V 40 2 0 0 1 2 3 0 0 50 100 150 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 400 360 320 280 240 200 160 120 80 40 0 0 2 4 6 8 150 C 25 C 8 Typ. forward transconductance g fs=f(I D); T j=25 C 200 160 120 g fs [S] 80 40 0 0 50 100 150 200 I D [A] V GS [V] I D [A] Rev.2.3 page 5 2009-10-22 BSC031N06NS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=50 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 6 5 5 4 4 R DS(on) [m] max V GS(th) [V] 3 93 A 930 A 3 typ 2 2 1 1 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 103 Ciss 150C 98% 103 Coss 1000 102 150 C 25 C C [pF] I F [A] 25C 98% 102 100 101 Crss 101 10 100 20 40 60 0 0.5 1 1.5 2 0 V DS [V] V SD [V] Rev.2.3 page 6 2009-10-22 BSC031N06NS3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=50 A pulsed parameter: V DD 12 10 125 C 100 C 25 C 30 V 8 12 V 48 V I AV [A] 10 V GS [V] 1 10 100 1000 6 4 2 1 0 0 20 40 60 80 100 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 70 V GS 65 Qg 60 V BR(DSS) [V] 55 V g s(th) 50 45 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 40 T j [C] Rev.2.3 page 7 2009-10-22 BSC031N06NS3 G PG-TDSON-8 (SuperSO8) Rev.2.3 page 8 2009-10-22 BSC031N06NS3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 page 9 2009-10-22 |
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